FDS4465
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS4465
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W 20 V Continuous Drain Current (ID):13.5 A 120 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 8.5 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.13 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -13.5 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -600 mV |
| Number of Channels | 1 |
| Input capacitance | 8.237 nF |
| Continuous Drain Current (ID) | 13.5 A |
| Rds On Max | 8.5 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 300 ns |
| Element Configuration | Single |
| Fall Time | 140 ns |
| Rise Time | 24 ns |
| Dual Supply Voltage | -20 V |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 8.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -600 mV |
| Gate to Source Voltage (Vgs) | -8 V, 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| Drain to Source Breakdown Voltage | -20 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 124
Distributors
pcbx
pcbxUnit Price$1.07530
Ext.Price$1.07530
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.07530 | $1.07530 |
| 10 | $0.90720 | $9.07200 |
| 25 | $0.83848 | $20.96200 |
| 50 | $0.77496 | $38.74800 |
| 100 | $0.71625 | $71.62500 |
| 300 | $0.69288 | $207.86400 |
| 500 | $0.67027 | $335.13500 |
| 1000 | $0.64883 | $648.83000 |